DRDO's SSPL develops indigenous Silicon Carbide wafers and GaN MMIC technology
On 11 November 2024, the Defence Ministry said DRDO's Solid State Physics Laboratory has developed indigenous processes to grow 4-inch Silicon Carbide wafers and fabricate GaN HEMT-based MMICs up to X-band.
Summary
On 11 November 2024, the Ministry of Defence said the Solid State Physics Laboratory (SSPL), a DRDO laboratory, has developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuits (MMICs) for applications up to X-band. The technology offers better efficiency and lower size and weight, for future combat systems, radars, electronic warfare and green energy. Indigenous GaN-on-SiC MMICs with limited production capability have been established at GAETEC, Hyderabad.
Key facts
- Date
- 11 Nov 2024
- Lab
- Solid State Physics Laboratory (DRDO)
- Wafers
- 4-inch Silicon Carbide (SiC)
- Devices
- GaN HEMT-based MMICs up to X-band
- Production
- GaN-on-SiC MMICs at GAETEC, Hyderabad
- Uses
- Radars, EW, combat systems, green energy
Practice MCQs 3 questions
Which DRDO laboratory developed indigenous processes for 4-inch Silicon Carbide wafers and GaN HEMT-based MMICs (announced November 2024)?
Show answer
Correct answer: C — Solid State Physics Laboratory
PIB (MoD): the Solid State Physics Laboratory, a DRDO laboratory, developed these processes.
What is the diameter of the indigenous Silicon Carbide wafers developed by DRDO's SSPL?
Show answer
Correct answer: D — 4 inches
PIB (MoD): SSPL developed processes for growing and manufacturing 4-inch diameter SiC wafers.
Where has limited production of indigenous GaN-on-SiC MMICs been established?
Show answer
Correct answer: A — GAETEC, Hyderabad
PIB (MoD): indigenous GaN-on-SiC MMICs with limited production capability have been established at GAETEC, Hyderabad.